vs-40tps16pbf, VS-40TPS16-M3 www.vishay.com vishay semiconductors revision: 10-nov-11 1 document number: 94389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 40 a features ? high voltage (up to 1600 v) ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec ? 125 c max. operatin g junction temperature ? halogen-free according to iec 61249-2-21 definition (-m3 only) applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor cont rol, ups, welding and battery charge description the vs-40tps16... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-247ac diode variation single scr i t(av) 35 a v drm /v rrm 1600 v v tm 1.45 v i gt 150 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-247ac major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 35 a i rms 55 v rrm /v drm 1600 v i tsm 500 a v t 40 a, t j = 25 c 1.45 v dv/dt 1000 v/s di/dt 100 a/s t j - 40 to 125 c voltage ratings part number v rrm /v drm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma vs-40tps16pbf, VS-40TPS16-M3 1600 1700 10
vs-40tps16pbf, VS-40TPS16-M3 www.vishay.com vishay semiconductors revision: 10-nov-11 2 document number: 94389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 79 c, 180 conduc tion half sine wave 35 a maximum continuous rms on-state current as ac switch i t(rms) 55 maximum peak, one-cycle non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied initial t j = t j maximum 500 10 ms sine pulse, no voltage reapplied 600 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 1250 a 2 s 10 ms sine pulse, no voltage reapplied 1760 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 12 500 a 2 ? s low level value of threshold voltage v t(to)1 t j = 125 c 1.02 v high level value of threshold voltage v t(to)2 1.23 low level value of on-state slope resistance r t1 9.74 m ? high level value of on-state slope resistance r t2 7.50 maximum peak on-state voltage v tm 110 a, t j = 25 c 1.85 v maximum rate of rise of turned-on current di/dt t j = 25 c 100 a/s maximum holding current i h 150 ma maximum latching current i l 300 maximum reverse and direct leakage current i rrm /i drm t j = 25 c v r = rated v rrm /v drm 0.5 t j = 125 c 10 maximum rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , r g -k = open 1000 v/s triggering parameter symbol test conditions values units maximum peak gate power p gm 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate voltage to trigger v gt t j = - 40 c anode supply = 6 v resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum required dc gate current to trigger i gt t j = - 40 c 270 ma t j = 25 c 150 t j = 125 c 80 t j = 25 c, for 40tps08a 40 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 v maximum dc gate current not to trigger i gd 6ma
vs-40tps16pbf, VS-40TPS16-M3 www.vishay.com vishay semiconductors revision: 10-nov-11 3 document number: 94389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 0.6 c/w maximum thermal resistance, junction to ambient r thja 40 maximum thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac 40tps16 70 80 90 100 110 120 130 010203040 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 40tps.. series r (dc) = 0.6 c/ w thjc 70 80 90 100 110 120 130 0 102030405060 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 40tps.. series r (dc) = 0.6 c/ w thjc 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 4 0 tps. . se r i e s t = 125c j 0 10 20 30 40 50 60 70 80 0 102030405060 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 40tps.. series t = 125 c j
vs-40tps16pbf, VS-40TPS16-M3 www.vishay.com vishay semiconductors revision: 10-nov-11 4 document number: 94389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non- repetitive surge curren t fig. 6 - maximum non- repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - gate characteristics 250 300 350 400 450 500 550 110100 number of equal amplitude half cycle current pulses (n) pe a k ha lf s ine wave on-state current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 4 0 tps. . se r i e s at any ra ted load condition and with rated v applied following surge. rrm 250 300 350 400 450 500 550 600 0.01 0.1 1 peak half sine wave on-state current (a) pu lse tra in d ura t io n ( s) maximum non repetitive surge current versus pulse t rain duration. control of conduction may not be maintained. 4 0 tp s. . se r i e s init ia l t = 125c no vo lta g e re a p p lie d rated v reapplied j rrm 1 10 100 0.5 1 1.5 2 t = 2 5 c instantaneous on-state current (a) in st a n t a n e o u s o n -st a t e v o lt a g e ( v ) t = 125c j 4 0 tp s. . se r i e s j 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, t p = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms instantaneous gate current (a) instantaneous gate voltage (v) t j = -40 c t j = 25 c t j = 125 c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) ra ted di/ dt : 20 v, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s 40tps..
vs-40tps16pbf, VS-40TPS16-M3 www.vishay.com vishay semiconductors revision: 10-nov-11 5 document number: 94389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - thermal impedance z thjc characteristics ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-40tps16pbf 25 500 antist atic plastic tubes VS-40TPS16-M3 25 500 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -m3 www.vishay.com/doc?95007 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) steady state value (dc operation) si n g l e pu l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 40tps.. serie s thjc tr a n si e n t th e r m a l i m p e d a n c e z ( c / w ) 2 - current rating (40 = 40 a) 3 - circuit configuration: 4 - package: 5 t = thyristor - type of silicon: 6 - voltage rating (16 = 1600 v) p = to-247 s = standard recovery rectifier 7 - device code 6 2 4 3 5 7 40 t p s 16 pbf 1 - vishay semiconductors product 1 v s - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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